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STF42N60M2-EP Datasheet(PDF) 5 Page - STMicroelectronics |
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STF42N60M2-EP Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page DocID027376 Rev 1 5/16 STF42N60M2-EP, STFW42N60M2-EP Electrical characteristics 16 Table 8. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD =300 V, ID =17 A, RG =4.7 Ω, VGS =10V (see Figure 17 and Figure 22) - 16.5 - ns tr Rise time - 9.5 - ns td(off) Turn-off-delay time - 96.5 - ns tf Fall time - 8 - ns Table 9. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 34 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 136 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 34 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 34 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 438 ns Qrr Reverse recovery charge - 9 µC IRRM Reverse recovery current - 41.5 A trr Reverse recovery time ISD = 34 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 538 ns Qrr Reverse recovery charge - 12 µC IRRM Reverse recovery current - 44.5 A |
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