STFW42N60M2-EP datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STFW42N60M2-EP

Description	N-channel 600 V, 0.076 ??typ., 34 A MDmesh??M2 EP Power MOSFETs in TO-220FP and TO-3PF packages

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STF42N60M2-EP, STFW42N60M2-EP

Electrical characteristics

16

Table 8. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD =300 V, ID =17 A,

RG =4.7 Ω, VGS =10V

(see Figure 17 and

Figure 22)

-

16.5

-

ns

tr

Rise time

-

9.5

-

ns

td(off)

Turn-off-delay time

-

96.5

-

ns

tf

Fall time

-

8

-

ns

Table 9. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

34

A

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

136

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 34 A, VGS = 0

-

1.6

V

trr

Reverse recovery time

ISD = 34 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 22)

-

438

ns

Qrr

Reverse recovery charge

-

9

µC

IRRM

Reverse recovery current

-

41.5

A

trr

Reverse recovery time

ISD = 34 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 22)

-

538

ns

Qrr

Reverse recovery charge

-

12

µC

IRRM

Reverse recovery current

-

44.5

A

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STFW42N60M2-EP Datasheet(PDF) 5 Page - STMicroelectronics

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