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STB34NM60N Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB34NM60N
Description  Low gate input resistance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB34NM60N Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
March 2015
DocID17740 Rev 9
1/17
17
STB34NM60N,
STP34NM60N
N-channel 600 V, 0.092
Ω, 31.5 A MDmesh™ II Power MOSFETs
in D²PAK and TO-220 packages
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
D PAK
2
TO-220
1
3
TAB
2
1
2
3
TAB
Order codes
VDSS
RDS(on)
ID
PTOT
STB34NM60N
600 V
0.105
Ω
31.5 A
250 W
STP34NM60N
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STB34NM60N
34NM60N
D2PAK
Tape and reel
STP34NM60N
TO-220
Tube
www.st.com


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