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STB85NS04Z Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB85NS04Z
Description  Low capacitance and gate charge
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB85NS04Z Datasheet(HTML) 5 Page - STMicroelectronics

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STB85NS04Z - STB85NS04Z-1
Electrical characteristics
5/15
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
33
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 16V,
VDS = 16V, Tc=125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±10V
10
µA
VGSS
Gate-source breakdown
voltage
IGS = 100µA
18
25
V
RG
Series gate resistance
14
Ω
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 1mA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 30A
11
15
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
Forward transconductance
VDS = 25V, ID= 30A
50
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1MHz, VGS=0
2500
800
150
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=16V, ID = 60A
VGS =10V
(see Figure 14)
68
15
19
100
nC
nC
nC
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