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SI2311DS Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI2311DS Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si2311DS Vishay Siliconix New Product www.vishay.com 4 Document Number: 71813 S-05831—Rev. A, 04-Mar-02 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) –0.2 –0.1 0.0 0.1 0.2 0.3 0.4 –50 –25 0 25 50 75 100 125 150 ID = 250 mA 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 02468 0.01 20 ID = 3.5 A 0 6 10 2 4 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Threshold Voltage TJ – Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Time (sec) 8 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–3 10–2 1 10 500 10–1 10–4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 140_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1 10 0.1 0.01 1 10 1000 0.1 100 TA = 25_C |
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