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SI2321DS Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI2321DS Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si2321DS Vishay Siliconix New Product www.vishay.com 4 Document Number: 72210 S-03986—Rev. A, 19-May-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 mA 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 012 34 56 78 0.1 10 20 ID = 3.3 A 0.01 0 1 6 10 2 4 10 600 0.1 0.0 0.2 0.4 0.6 0.8 TJ = 150_C Threshold Voltage TJ - Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Time (sec) 8 100 TA = 25_C TJ = 25_C Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 Limited by rDS(on) 0.01 10 TA = 25_C Single Pulse 10 ms 100 ms dc, 100 s, 10 s, 1 s 0.1 100 ms, 10 ms 1 1 ms |
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