STFU15NM65N datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STFU15NM65N

Description	N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

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Electrical characteristics

STFU15NM65N

4/12

DocID027631 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

1

µA

VDS = 650 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 6 A

0.35

0.38

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0 V

-

983

-

pF

Coss

Output capacitance

-

57

-

Crss

Reverse transfer

capacitance

-

4.5

-

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0 V

-

146

-

pF

RG

Intrinsic gate resistance

f = 1 MHz open drain

-

4.9

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 12 A,

VGS = 10 V

-

33.3

-

nC

Qgs

Gate-source charge

-

5.7

-

Qgd

Gate-drain charge

-

17

-

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 6 A,

RG = 4.7

Ω, VGS = 10 V

-

55.5

-

ns

tr

Rise time

-

8.5

-

td(off)

Turn-off delay time

-

14

-

tf

Fall time

-

11.4

-

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