STFU15NM65N datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STFU15NM65N

Description	N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

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STFU15NM65N

Electrical characteristics

DocID027631 Rev 2

5/12

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

12

A

ISDM(1)

Source-drain current

(pulsed)

-

48

A

VSD(2)

Forward on voltage

ISD = 12 A, VGS = 0 V

-

1.6

V

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V

-

428

ns

Qrr

Reverse recovery charge

-

4.7

µC

IRRM

Reverse recovery current

-

21.5

A

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

-

570

ns

Qrr

Reverse recovery charge

-

6.2

µC

IRRM

Reverse recovery current

-

22

A

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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