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SI4539ADY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4539ADY Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  Si4539ADY Vishay Siliconix www.vishay.com 2-2 Document Number: 71131 S-03951—Rev. B, 26-May-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA N-Ch 1.0 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA P-Ch - 1.0 V Gate Body Leakage IGSS VDS = 0 V, VGS = "20 V N-Ch "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V P-Ch "100 nA VDS = 24 V, VGS = 0 V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V P-Ch -1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 mA VDS = - 24 V, VGS = 0 V, TJ = 55_C P-Ch -5 On State Drain Currenta ID( ) VDS w 5 V, VGS = 10 V N-Ch 30 A On-State Drain Currenta ID(on) VDS p -5 V, VGS = - 10 V P-Ch -30 A VGS = 10 V, ID = 5.9 A N-Ch 0.032 0.036 Drain Source On State Resistancea rDS( ) VGS = - 10 V, ID = - 4.9 A P-Ch 0.043 0.053 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 4.9 A N-Ch 0.042 0.053 W VGS = - 4.5 V, ID = - 3.7 A P-Ch 0.075 0.090 Forward Transconductancea gf VDS = 15 V, ID = 5.9 A N-Ch 15 S Forward Transconductancea gfs VDS = - 15 V, ID = - 4.9 A P-Ch 9 S Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V N-Ch 0.80 1.2 V Diode Forward Voltagea VSD IS = - 1.7 A, VGS = 0 V P-Ch - 0.80 - 1.2 V Dynamicb Total Gate Charge Qg N-Ch 13 20 Total Gate Charge Qg N-Channel VDS = 15 V VGS = 10 V ID = 5 9 A P-Ch 15 25 Gate Source Charge Q VDS = 15 V, VGS = 10 V, ID = 5.9 A P Channel N-Ch 2.3 nC Gate-Source Charge Qgs P-Channel VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A P-Ch 4 nC Gate Drain Charge Q d VDS = 15 V, VGS = 10 V, ID = 4.9 A N-Ch 2 Gate-Drain Charge Qgd P-Ch 2.0 Gate Resistance R N-Ch 0.5 2.2 W Gate Resistance Rg P-Ch 5 12.6 W Turn On Delay Time td( ) N-Ch 6 12 Turn-On Delay Time td(on) P-Ch 7 15 Rise Time t N-Channel VDD = 15 V, RL = 15 W N-Ch 14 25 Rise Time tr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Ch 10 20 Turn Off Delay Time td( ff) P-Channel V 1 V R 1 W N-Ch 30 60 ns Turn-Off Delay Time td(off) P Channel VDD = - 15 V, RL = 15 W ID ^ -1 A, VGEN = - 10 V, RG = 6 W P-Ch 40 80 ns Fall Time tf ID ^ - 1 A, VGEN = - 10 V, RG = 6 W N-Ch 5 10 Fall Time tf P-Ch 20 40 Source-Drain t IF = 1.7 A, di/dt = 100 A/ms N-Ch 30 60 Source-Drain Reverse Recovery Time trr IF = - 1.7 A, di/dt = 100 A/ms P-Ch 30 60 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. |
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