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SI7356DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7356DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si7356DP Vishay Siliconix New Product Document Number: 72222 S-32039—Rev. B, 13-Oct-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 1700 3400 5100 6800 8500 0 6 12 18 24 30 0.000 0.001 0.002 0.003 0.004 0.005 0 10203040 50 0 1 2 3 4 5 6 0 102030 405060 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Crss VDS = 15 V ID = 20 A VGS = 10 V ID = 25 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) VGS = 4.5 V 1.0 1.2 0.000 0.003 0.006 0.009 0.012 0.015 0 2468 10 0.1 10 50 ID = 25 A 0.00 0.2 0.4 0.6 0.8 TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Coss Ciss 1 TJ = 25_C |
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