SI7392DP datasheet(1/5 Pages) VISHAY

Part #	SI7392DP

Description	N-Channel Reduced Qg, Fast Switching WFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D Extremely Low Qgd WFET Technology for

Low Switching Losses

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

D 100% Rg Tested

APPLICATIONS

D High-Side DC/DC Conversion

− Notebook

− Server

Si7392DP

Vishay Siliconix

Document Number: 72165

S-41427—Rev. D, 26-Jul-04

www.vishay.com

1

N-Channel Reduced Qg, Fast Switching WFETr

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

30

0.00975 @ VGS = 10 V

15

30

0.01375 @ VGS = 4.5 V

13

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Ordering Information: Si7392DP-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

15

9

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

12

7

A

Pulsed Drain Current

IDM

"50

A

Continuous Source Current (Diode Conduction)a

IS

4.1

1.5

Maximum Power Dissipationa

TA = 25_C

PD

5

1.8

W

Maximum Power Dissipationa

TA = 70_C

PD

3.2

1.1

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction to Ambient (MOSFET)a

t v 10 sec

R

20

25

Maximum Junction-to-Ambient (MOSFET)a

Steady State

RthJA

53

70

_C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

3.5

4.5

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

Similar Part No. - SI7392DP

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI7392ADP	234Kb / 3P	N-Channel Reduced Qg, Fast Switching WFET Rev. B, 26-Jun-06

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Similar Description - SI7392DP

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI4392DY	55Kb / 5P	N-Channel Reduced Qg, Fast Switching WFET Rev. D, 26-Jul-04
	SI7392ADP	234Kb / 3P	N-Channel Reduced Qg, Fast Switching WFET Rev. B, 26-Jun-06
	SI4368DY	70Kb / 5P	N-Channel Reduced Qg, Fast Switching WFET Rev. A, 02-Feb-04
	SI4392DY	101Kb / 6P	N-Channel Reduced Qg, Fast Switching WFET® Rev. E, 12-Jun-06
	SI4390DY	44Kb / 5P	N-Channel Qg, Fast Switching WFET Rev. B, 19-May-03
	SI4394DY	70Kb / 5P	N-Channel Reduced Qdg, Fast Switching WFET Rev. A, 15-Mar-04
	SI4860DY	39Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFE Rev. C, 14-Apr-03
	SI7860DP-T1	147Kb / 7P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. E, 09-Feb-09
	SI4872DY	57Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. A, 17-Jul-00
	SI4850EY	61Kb / 4P	N-Channel Reduced Qg, Fast Switching MOSFET Rev. D, 29-Mar-04

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SI7392DP Datasheet(PDF) 1 Page - Vishay Siliconix

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