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SN74LVC1G86-Q1

SCES873 – MARCH 2017

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

(3)

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

–0.5

6.5

V

–0.5

6.5

V

–0.5

6.5

V

–0.5

V

Input clamp current

–50

mA

Output clamp current

–50

mA

Continuous output current

±50

mA

±100

mA

Junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±4000

V

Charged-device model (CDM), per AEC Q100-011

±1000

(1)

CMOS Inputs, SCBA004.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

Operating

1.65

5.5

V

Data retention only

1.5

High-level input voltage

V

1.7

2

Low-level input voltage

V

0.7

0.8

Input voltage

0

5.5

V

Output voltage

0

V

High-level output current

–4

mA

–8

–16

–24

–32