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TB3R1DR Datasheet(PDF) 2 Page - Texas Instruments |
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TB3R1DR Datasheet(HTML) 2 Page - Texas Instruments |
2 / 13 page TB3R1, TB3R2 SLLS587C – NOVEMBER 2003 – REVISED JANUARY 2008 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION PART NUMBER PART MARKING Package LEAD FIISH STATUS TB3R1D TB3R1 SOIC NiPdAu Production TB3R2D TB3R2 SOIC NiPdAu Production POWER DISSIPATION RATINGS THERMAL RESISTANCE, DERATING CIRCUIT BOARD POWER RATING POWER RATING PACKAGE JUNCTION-TO-AMBIENT FACTOR(1) MODEL TA≤ 25°C TA = 85°C WITH NO AIR FLOW TA≥ 25°C Low-K(1) 763 mW 131.1°C/W 7.6 mW/°C 305 mW D High-K(2) 1190 mW 84.1°C/W 11.9 mW/°C 475 mW Low-K(1) 831 mW 120.3°C/W 8.3 mW/°C 332 mW DW High-K(2) 1240 mW 80.8°C/W 12.4 mW/°C 494 mW (1) In accordance with the low-K thermal metric definitions of EIA/JESD51-3. (2) In accordance with the high-K thermal metric definitions of EIA/JESD51-7. THERMAL CHARACTERISTICs PARAMETER PACKAGE VALUE UNIT D 47.5 °C/W θJB Junction-to-Board Thermal Resistance DW 53.7 °C/W D 44.2 °C/W θJC Junction-to-Case Thermal Resistance DW 47.1 °C/W ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) UNIT Supply voltage, VCC 0 V to 6 V Magnitude of differential bus (input) voltage, |VAI - V|, |VBI - V|, |VCI - V|, |VDI - V| 6.5 V Human Body Model(2) All pins ±3 kV ESD Charged-Device Model(3) All pins ±2 kV Continuous power dissipation See Dissipation Rating Table Storage temperature, Tstg -65°C to 150°C (1) Stresses beyond those listed under„ absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under„ recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Tested in accordance with JEDEC Standard 22, Test Method A114-A. (3) Tested in accordance with JEDEC Standard 22, Test Method C101. 2 Submit Documentation Feedback Copyright © 2003–2008, Texas Instruments Incorporated Product Folder Links: TB3R1 TB3R2 |
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