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STGB15H60DF Datasheet(PDF) 1 Page - STMicroelectronics |
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STGB15H60DF Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 23 page This is information on a product in full production. October 2013 DocID025113 Rev 2 1/23 STGB15H60DF, STGF15H60DF, STGP15H60DF Trench gate field-stop IGBT, H series 600 V, 15 A high speed Datasheet − production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. TO-220 D²PAK 1 2 3 TAB 1 3 TAB TO-220FP 1 2 3 C (2, TAB) E (3) G (1) Table 1. Device summary Order codes Marking Packages Packaging STGB15H60DF GB15H60DF D²PAK Tape and reel STGF15H60DF GF15H60DF TO-220FP Tube STGP15H60DF GP15H60DF TO-220 Tube www.st.com |
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