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STGP20V60DF Datasheet(PDF) 5 Page - STMicroelectronics |
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STGP20V60DF Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 23 page DocID024360 Rev 3 5/23 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V CE = 400 V, I C = 20 A, V GE = 15 V , see Figure 28 -38 - ns t r Current rise time - 10 - ns (di/dt) on Turn-on current slope - 1556 - A/μs t d(off) Turn-off delay time - 149 - ns t f Current fall time - 15 - ns E on (1) 1. Energy losses include reverse recovery of the diode. Turn-on switching losses - 200 - μJ E off (2) 2. Turn-off losses include also the tail of the collector current. Turn-off switching losses - 130 - μJ E ts Total switching losses - 330 - μJ t d(on) Turn-on delay time V CE = 400 V, I C = 20 A, di/dt = 1000 A/μs, V GE = 15 V , T J = 175 °C, see Figure 28 -37 - ns t r Current rise time - 12 - ns (di/dt) on Turn-on current slope - 1340 - A/μs t d(off) Turn-off delay time - 150 - ns t f Current fall time - 23 - ns E on (1) Turn-on switching losses - 430 - μJ E off (2) Turn-off switching losses - 210 - μJ E ts Total switching losses - 640 - μJ Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time I F = 20 A, V R = 400 V, V GE = 15 V, see Figure 28 di/dt = 1000 A/μs -40 - ns Q rr Reverse recovery charge - 320 - nC I rrm Reverse recovery current - 16 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b - 910 - A/μs E rr Reverse recovery energy - 115 - μJ t rr Reverse recovery time I F = 20 A, V R = 400 V, V GE = 15 V, T J = 175 °C, see Figure 28 di/dt = 1000 A/μs -72 - ns Q rr Reverse recovery charge - 930 - nC I rrm Reverse recovery current - 26 - A dI rr/ /dt Peak rate of fall of reverse recovery current during t b - 530 - A/μs E rr Reverse recovery energy - 307 - μJ |
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