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STGP30V60F Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGP30V60F
Description  Low thermal resistance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30V60F Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
April 2014
DocID025049 Rev 4
1/19
19
STGB30V60F,
STGP30V60F
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
G (1)
E (3)
D2PAK
TO-220
1
3
TAB
1
2
3
TAB
Table 1. Device summary
Order codes
Marking
Package
Packaging
STGB30V60F
GB30V60F
D2PAK
Tape and reel
STGP30V60F
GP30V60F
TO-220
Tube
www.st.com


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