STGFW35HF60W datasheet(5/17 Pages) STMICROELECTRONICS

Part #	STGFW35HF60W

Description	35 A, 600 V Ultrafast IGBT

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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5 / 17 page

STGF35HF60W, STGW35HF60W, STGFW35HF60W

Electrical characteristics

Doc ID 17490 Rev 3

5/17

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 400 V, IC = 20 A

RG = 10 Ω, VGE = 15 V,

(see Figure 17)

-

30

15

1650

-

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 400 V, IC = 20 A

RG = 10 Ω, VGE = 15 V,

TJ = 125 °C (see Figure 17)

-

30

15

1600

-

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 400 V, IC = 20 A,

RGE = 10 Ω, VGE = 15 V

(see Figure 17)

-

30

175

40

-

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 400 V, IC = 20 A,

RGE = 10 Ω, VGE =15 V,

TJ = 125 °C

(see Figure 17)

-

50

225

70

-

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

(1)

Eoff

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in

Figure 19. If the IGBT is offered

in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the

same temperature (25 °C and 125 °C). Eon includes diode recovery energy.

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 400 V, IC = 20 A

RG = 10 Ω, VGE = 15 V,

(see Figure 19)

-

290

185

475

µJ

Eon

(1)

Eoff

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 400 V, IC = 20 A

RG = 10 Ω, VGE = 15 V,

TJ = 125 °C (see Figure 19)

-

420

350

770

530

µJ

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