STGW80H65FB-4 datasheet(4/14 Pages) STMICROELECTRONICS

Part #	STGW80H65FB-4

Description	Safe paralleling

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGW80H65FB-4

4/14

DocID029224 Rev 3

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 80 A

1.6

2.0

V

VGE = 15 V, IC = 80 A,

TJ = 125 °C

1.8

VGE = 15 V, IC = 80 A,

TJ = 175 °C

1.9

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

100

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

nA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

-

10.5

-

nF

Coes

Output capacitance

-

0.38

-

Cres

Reverse transfer capacitance

-

0.21

-

Qg

Total gate charge

VCC = 520 V, IC = 80 A,

VGE = 0 to 15 V

(see Figure 23: "Gate

charge test circuit")

-

414

-

nC

Qge

Gate-emitter charge

-

78

-

Qgc

Gate-collector charge

-

170

-

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