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TA8260AH Datasheet(PDF) 9 Page - Toshiba Semiconductor |
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TA8260AH Datasheet(HTML) 9 Page - Toshiba Semiconductor |
9 / 15 page TA8260AH 2002-03-05 9 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Peak supply voltage (0.2 s) VCC (surge) 50 V DC supply voltage VCC (DC) 25 V Operating supply voltage VCC (opr) 18 V Output current (peak) IO (peak) 9 A Power dissipation PD (Note 1) 250 W Operating temperature Topr −40~85 °C Storage temperature Tstg −55~150 °C Note 1: Package thermal resistance θj-T = 0.5°C/W (typ.) (Ta = 25°C, with infinite heat sink) Electrical Characteristics (unless otherwise specified, VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Quiescent current ICCQ ― VIN = 0 ― 200 400 mA POUT MAX (1) ― VCC = 14.4 V, MAX power ― 40 ― POUT MAX (2) ― VCC = 13.7 V, MAX power ― 37 ― POUT (1) ― VCC = 14.4 V, THD = 10% ― 27 ― Output power POUT (2) ― THD = 10% 20 22 ― W Total harmonic distortion THD ― POUT = 5 W ― 0.02 0.2 % Voltage gain GV ― VOUT = 0.775 Vrms (0dBm) 24 26 28 dB Voltage gain ratio ∆GV ― VOUT = 0.775 Vrms (0dBm) −1.0 0 1.0 dB VNO (1) ― Rg = 0 Ω, DIN45405 ― 0.12 ― Output noise voltage VNO (2) ― Rg = 0 Ω, BW = 20 Hz~20 kHz ― 0.10 0.35 mVrms Ripple rejection ratio R.R. ― frip = 100 Hz, Rg = 620 Ω Vrip = 0.775 Vrms (0dBm) 40 50 ― dB Cross talk C.T. ― Rg = 620 Ω, VOUT = 0.775 Vrms (0dBm) ― 70 ― dB Output offset voltage VOFFSET ― ― −100 0 100 mV Input resistance RIN ― ― ― 90 ― kΩ Stand-by current ISB ― Stand-by condition ― 2 10 µA VSB H ― Power: on 3.0 ― 6.0 Stand-by control voltage VSB L ― Power: off 0 ― 1.5 V VM H ― Mute: off OPEN ― Mute control voltage (Note 2) VM L ― Mute: on, R1 = 10 kΩ 0 ― 0.5 V Mute attenuation ATT M ― Mute: on, VOUT = 7.75 Vrms (20dBm) at Mute: off. 80 90 ― dB Note 2: Muting function have to be controlled by open and Low Logic, which Logic is a transistor, FET and µ-COM port of IMUTE ≥ 250 µA ability. This means that the Mute control terminal: pin 24 must not be pulled-up. |
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