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TB6551FG Datasheet(PDF) 8 Page - Toshiba Semiconductor |
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TB6551FG Datasheet(HTML) 8 Page - Toshiba Semiconductor |
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8 / 18 page  TB6551F 2002-12-24 8 Electrical Characteristics (Ta ==== 25°C, VCC ==== 15 V) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Supply current ICC ¾ Vrefout = open ¾ 3 6 mA Iin (1) Vin = 5 V Ve, LA ¾ 20 40 Iin (2)-1 Vin = 0 V HU, HV, HW -40 -20 ¾ Iin (2)-2 Vin = 0 V CW/CCW, OS, Td -80 -40 ¾ Input current Iin (2)-3 ¾ Vin = 5 V RES ¾ 40 80 mA High Vrefout - 1 ¾ Vrefout Input voltage Vin Low ¾ HU, HV, HW, CW/CCW, RES, OS, Td ¾ ¾ 0.8 V Input hysteresis voltage VH ¾ HU, HV, HW, CW/CCW, RES ¾ 0.3 ¾ V VOUT (H)-1 IOUT = 2 mA U, V, W, X, Y, Z Vrefout - 0.78 Vrefout - 0.4 ¾ VOUT (L)-1 IOUT = -2 mA U, V, W, X, Y, Z ¾ 0.4 0.78 VREV (H) IOUT = 1 mA REV Vrefout - 1.0 Vrefout - 0.5 ¾ VREV (L) IOUT = -1 mA REV ¾ 0.5 1.0 VFG(H) IOUT = 1 mA FG Vrefout - 1.0 Vrefout - 0.5 ¾ VFG(L) IOUT = -1 mA FG ¾ 0.5 1.0 Output voltage Vrefout ¾ IOUT = 30 mA Vrefout 4.5 5.0 5.5 V IL (H) VOUT = 0 V U, V, W, X, Y, Z ¾ 0 10 Output leakage current IL (L) ¾ VOUT = 3.5 V U, V, W, X, Y, Z ¾ 0 10 mA TOFF(H) ¾ Td = High or open, Xin = 4.19 MHz, IOUT = ± 2 mA, OS = High/Low 2.2 2.6 ¾ Output off-time by upper/lower transistor (Note 1) TOFF(L) Td = Low, Xin = 4.19 MHz, IOUT = ± 2 mA, OS = High/Low 3.0 3.8 ¾ ms Overcurrent detection Vdc ¾ Idc 0.46 0.5 0.54 V TLA (0) LA = 0 V or Open, Hall IN = 100 Hz ¾ 0 ¾ TLA (2.5) LA = 2.5 V, Hall IN = 100 Hz 27.5 32 34.5 Lead angle correction TLA (5) LA = 5 V, Hall IN = 100 Hz 53.5 59 62.5 ° VCC (H) Output start operation point 4.2 4.5 4.8 VCC (L) No output operation point 3.7 4.0 4.3 VCC monitor VH Input hysteresis width ¾ 0.5 ¾ V Note 5: TOFF OS = High OS = Low 0.78 V 0.78 V TOFF TOFF 0.78 V 0.78 V Turn-on signal (U, V, W) Turn-on signal (X, Y, Z) Vrefout - 0.78 V TOFF Turn-on signal (U, V, W) Turn-on signal (X, Y, Z) TOFF Vrefout - 0.78 V Vrefout - 0.78 V Vrefout - 0.78 V |
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