STGIPQ3H60T-HZ datasheet(5/26 Pages) STMICROELECTRONICS

Part #	STGIPQ3H60T-HZ

Description	SLLIMM??nano - 2 nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STGIPQ3H60T-HL, STGIPQ3H60T-HZ

Electrical ratings

DocID027219 Rev 5

5/26

2

Electrical ratings

2.1

Absolute maximum ratings

Table 3: Inverter part

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage each IGBT (VIN(1)= 0 V)

600

V

IC

Continuous collector current each IGBT

3

A

ICP(2)

Peak collector current each IGBT (less than 1 ms)

6

A

PTOT

Total dissipation at TC=25 °C each IGBT

12

W

Notes:

(1)Applied among HINx, LINx and GND for x = U, V, W.

(2)Pulse width limited by max. junction temperature.

Table 4: Control part

Symbol

Parameter

Min.

Max.

Unit

VCC

Low voltage power supply

- 0.3

21

V

Vboot

Bootstrap voltage

- 0.3

620

V

VOUT

Output voltage applied among OUTU, OUTV, OUTW -

GND

Vboot - 21

Vboot + 0.3

V

VCIN

Comparator input voltage

- 0.3

VCC + 0.3

V

Vop+

Op-amp non-inverting input

- 0.3

VCC + 0.3

V

Vop-

Op-amp inverting input

- 0.3

VCC + 0.3

V

VIN

Logic input voltage applied among HINx, LINx and

GND

- 0.3

15

V

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Open-drain voltage

- 0.3

15

V

∆VOUT/dT

Allowed output slew rate

50

V/ns

Table 5: Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied to each pin and

heatsink plate (AC voltage, t = 60 s)

1500

V

Tj

Power chip operating junction temperature

-40 to 150

°C

TC

Module case operation temperature

-40 to 125

°C

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