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STGW80H65DFB Datasheet(PDF) 7 Page - STMicroelectronics

Part # STGW80H65DFB
Description  Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW80H65DFB Datasheet(HTML) 7 Page - STMicroelectronics

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DocID024366 Rev 6
7/22
STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB
Electrical characteris-
22
Figure 8. VCE(sat) vs. collector current
Figure 9. Forward bias safe operating area
VCE(sat)
1.4
1.2
1
0.8
0
IC(A)
(V)
60
1.6
20
40
1.8
2
2.2
80
VGE= 15V
TJ= 175°C
TJ= 25°C
TJ= -40°C
2.4
2.6
100 120 140
GIPD160920131029FSR
IC
100
10
1
0.1
1
VCE(V)
(A)
10
100
10μs
100μs
1ms
Single pulse
Tc= 25°C, TJ ≤ 175°C
VGE= 15V
GIPD160920131115FSR
Figure 10. Diode VF vs. forward current
Figure 11. Normalized V(BR)CES vs. junction
temperature
VF
2
1.6
1.2
0.8
20
IF(A)
(V)
40
60
TJ= 175°C
25°C
-40°C
80
100 120 140
2.4
GIPD160920131135FSR
V(BR)CES
1.1
1
0.9
-50
TJ(°C)
(norm)
0
50
100
150
IC= 2mA
GIPD160920131144FSR
Figure 12. Normalized VGE(th) vs. junction
temperature
Figure 13. Gate charge vs. gate-emitter voltage
VGE
0.8
0.7
0.6
-50
TJ(°C)
(norm)
0
50
100
150
0.9
1
1.1
IC= 1mA
GIPD160920131151FSR
VGE
4
2
0
0Qg(nC)
(V)
100
200
300
400
6
8
10
12
14
16
IC= 80A
VCC= 520V
GIPD160920131156FSR


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