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STGW80H65DFB Datasheet(PDF) 7 Page - STMicroelectronics |
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STGW80H65DFB Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 22 page DocID024366 Rev 6 7/22 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Electrical characteris- 22 Figure 8. VCE(sat) vs. collector current Figure 9. Forward bias safe operating area VCE(sat) 1.4 1.2 1 0.8 0 IC(A) (V) 60 1.6 20 40 1.8 2 2.2 80 VGE= 15V TJ= 175°C TJ= 25°C TJ= -40°C 2.4 2.6 100 120 140 GIPD160920131029FSR IC 100 10 1 0.1 1 VCE(V) (A) 10 100 10μs 100μs 1ms Single pulse Tc= 25°C, TJ ≤ 175°C VGE= 15V GIPD160920131115FSR Figure 10. Diode VF vs. forward current Figure 11. Normalized V(BR)CES vs. junction temperature VF 2 1.6 1.2 0.8 20 IF(A) (V) 40 60 TJ= 175°C 25°C -40°C 80 100 120 140 2.4 GIPD160920131135FSR V(BR)CES 1.1 1 0.9 -50 TJ(°C) (norm) 0 50 100 150 IC= 2mA GIPD160920131144FSR Figure 12. Normalized VGE(th) vs. junction temperature Figure 13. Gate charge vs. gate-emitter voltage VGE 0.8 0.7 0.6 -50 TJ(°C) (norm) 0 50 100 150 0.9 1 1.1 IC= 1mA GIPD160920131151FSR VGE 4 2 0 0Qg(nC) (V) 100 200 300 400 6 8 10 12 14 16 IC= 80A VCC= 520V GIPD160920131156FSR |
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