TC55W1600FT-55 datasheet(4/13 Pages) TOSHIBA

Part #	TC55W1600FT-55

Description	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 13 page

TC55W1600FT-55,-70

2002-02-12

4/13

DC CHARACTERISTICS (Ta

==== −−−−40° to 85°C, VDD ==== 2.3 to 3.1 V)

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

IIL

Input Leakage

Current

VIN = 0 V~VDD



±1.0

µA

IOH

Output High Current VOH = VDD − 0.4V

−1.0



mA

IOL

Output Low Current

VOL = 0.4 V

1.0



mA

ILO

Output Leakage

Current

1

CE

= VIH or CE2 = VIL or LB = UB = VIH or

R/W

= VIL or OE = VIH, VOUT = 0 V~VDD



±1.0

µA

55 ns



60

70 ns



50

lDDO1

1

CE

= VIL, CE2 = VIH,

R/W

= VIH, LB = UB = VIL,

IOUT = 0 mA

Other Input

= VIH/VIL

tcycle

1

µs



10

mA

55 ns



55

70 ns



45

lDDO2

Operating Current

1

CE

= 0.2 V, CE2 = VDD − 0.2 V

R/W

= VDD − 0.2 V, LB = UB = 0.2 V,

IOUT = 0 mA

Other Input

= VDD − 0.2 V/0.2 V

tcycle

1

µs



5

mA

IDDS1

1)

1

CE

= VIH or CE2 = VIL (at BYTE ≥ VDD − 0.2 V or ≤ 0.2 V)

2) LB

= UB = VIH (at BYTE ≥ VDD − 0.2 V)



2

mA

Ta

= 25°C



1

VDD = 3.1 V

Ta

= −40~85°C



10

Ta

= 25°C



0.05

0.5

Ta

= −40~40°C



1

IDDS2

Standby Current

1)

1

CE

= VDD − 0.2 V, CE2 =

VDD − 0.2 V (at BYTE ≥ VDD

− 0.2 V or ≤ 0.2 V)

2) CE2

= 0.2 V (at BYTE ≥ VDD

− 0.2 V or ≤ 0.2 V)

3) LB

= UB = VDD − 0.2 V,

1

CE

= 0.2 V, CE2 = VDD − 0.2 V

(at BYTE

≥ VDD − 0.2 V)

VDD = 3.0 V

Ta

= −40~85°C



5

µA

CAPACITANCE (Ta

==== 25°C, f ==== 1 MHz)

SYMBOL

PARAMETER

TEST CONDITION

MAX

UNIT

CIN

Input Capacitance

VIN = GND

10

pF

COUT

Output Capacitance

VOUT = GND

10

pF

Note:

This parameter is periodically sampled and is not 100% tested.

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TC55W1600FT-55 Datasheet(PDF) 4 Page - Toshiba Semiconductor

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