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STP30N10F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP30N10F7 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page February 2016 DocID028799 Rev 1 1/13 This is information on a product in full production. www.st.com STP30N10F7 N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STP30N10F7 100 V 0.024 Ω 32 A 50 W Among the lowest RDS(on) on the market Excellent figure of merit (FOM ) Low Crss /Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STP30N10F7 30N10F7 TO-220 Tube AM01475v1_Tab D(2, TAB) G(1) S(3) |
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