STP160N3LL datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STP160N3LL

Description	Very low on-resistance

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Electrical characteristics

STP160N3LL

4/13

DocID025073 Rev 3

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 250 µA

30

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 30 V

1

µA

VGS = 0 V, VDS = 30 V,

Tcase = 125 °C

10

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

1

2.5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 60 A

2.5

3.2

mΩ

VGS = 4.5 V, ID = 60 A

3.2

4.2

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

3500

-

pF

Coss

Output capacitance

-

400

-

Crss

Reverse transfer

capacitance

-

380

-

Qg

Total gate charge

VDD = 15 V, ID = 120 A,

VGS = 4.5 V (see Figure 14: "Gate

charge test circuit")

-

42

-

nC

Qgs

Gate-source charge

-

9

-

Qgd

Gate-drain charge

-

18

-

RG

Intrinsic gate

resistance

f = 1 MHz, ID = 0 A,

gate DC bias = 0 V,

magnitude of alternative

signal = 20 mV

-

1

-

Ω

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 15 V, ID = 60 A RG = 4.7

Ω,

VGS = 5 V (see Figure 13:

"Switching times test circuit for

resistive load" and Figure 18:

"Switching time waveform")

-

19

-

ns

tr

Rise time

-

91

-

td(off)

Turn-off delay time

-

24.5

-

tf

Fall time

-

23.4

-

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