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SLUSB98A – OCTOBER 2012 – REVISED DECEMBER 2014

Pin Functions (continued)

PIN

TYPE

DESCRIPTION

NAME

NUMBER

Battery connection point to the positive terminal of the battery pack. The internal BATFET is connected between BAT and

BAT

13,14

P

SYS. Connect a 10 µF closely to the BAT pin.

System connection point. The internal BATFET is connected between BAT and SYS. When the battery falls below the

SYS

15,16

P

minimum system voltage, switch-mode converter keeps SYS above the minimum system voltage. (Refer to Application

Information Section for inductor and capacitor selection.)

Power ground connection for high-current power converter node. Internally, PGND is connected to the source of the n-

PGND

17,18

P

channel LSFET. On PCB layout, connect directly to ground connection of input and output capacitors of the charger. A

single point connection is recommended between power PGND and the analog GND near the IC PGND pin.

O

Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel HSFET and the

SW

19,20

drain of the n-channel LSFET. Connect the 0.047-µF bootstrap capacitor from SW to BTST.

Analog

PWM high side driver positive supply. Internally, the BTST is connected to the anode of the boost-strap diode. Connect

BTST

21

P

the 0.047-µF bootstrap capacitor from SW to BTST.

PWM low side driver positive supply output. Internally, REGN is connected to the cathode of the boost-strap diode.

REGN

22

P

Connect a 4.7-µF (10-V rating) ceramic capacitor from REGN to analog GND. The capacitor should be placed close to the

IC. REGN also serves as bias rail of TS1 and TS2 pins.

Connected to the drain of the reverse blocking MOSFET and the drain of HSFET. Given the total input capacitance,

O

PMID

23

connect a 1-µF capacitor on VBUS to PGND, and the rest all on PMID to PGND. (Refer to Application Information Section

Analog

for details)

Thermal

Exposed pad beneath the IC for heat dissipation. Always solder thermal pad to the board, and have vias on the thermal

–

P

Pad

pad plane star-connecting to PGND and ground plane for high-current power converter.

7 Specifications

7.1 Absolute Maximum Ratings

(1)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VBUS

–2

22

V

PMID

–0.3

22

V

STAT, PG

–0.3

20

V

BTST

–0.3

26

V

Voltage range (with

SW

–2

20

V

respect to GND)

BAT, SYS (converter not switching)

–0.3

6

V

SDA, SCL, INT, OTG, ILIM, REGN, TS1, TS2, CE, PSEL

–0.3

7

V

BTST TO SW

–0.3

–7

V

PGND to GND

–0.3

–0.3

V

Output sink current

INT, STAT, PG

6

mA

Junction temperature

–40°C

150

°C

–65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage

values are with respect to the network ground terminal unless otherwise noted.

7.2 ESD Ratings

VALUE

UNIT

1000

Electrostatic discharge

V

Charged device model (CDM), per JEDEC specification JESD22-

250

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

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