STPSC8H065C datasheet(3/8 Pages) STMICROELECTRONICS

Part #	STPSC8H065C

Description	High forward surge capability

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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DocID024808 Rev 2

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STPSC8H065C

Characteristics

8

Table 5. Dynamic electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

Total capacitive charge

VR = 400 V

12.5

nC

Cj

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

200

pF

VR = 400 V, Tc = 25 °C, F = 1 MHz

21

1.

Most accurate value for the capacitive charge: Q =

cj(vR).dvR

cj

∫

VOUT

0

Figure 1. Forward voltage drop versus forward

current (typical values, low level, per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, high level, per diode)

0

1

2

3

4

5

6

7

8

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

A)

I

FM(

VFM(V)

0

4

8

12

16

20

24

28

32

36

40

01

23

456

78

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

I

FM(A)

VFM(V)

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Figure 4. Peak forward current versus case

temperature (per diode)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

50 100 150 200 250 300 350 400 450 500 550 600 650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

I M (A)

0

10

20

30

40

50

0

25

50

75

100

125

150

175

d = 0.1

d = 0.3

d = 0.5

d = 1

d = 0.7

TC(°C)

T

d=tp/T

tp

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