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STS9P3LLH6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STS9P3LLH6 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STS9P3LLH6 Electrical characteristics DocID025824 Rev 2 5/13 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD = -4.5 A, VGS = 0 - -1.1 V trr Reverse recovery time ISD = -4.5 A, di/dt = 100 A/µs VDD = -24 V, Tj = 150 °C - 20 ns Qrr Reverse recovery charge - 16 nC IRRM Reverse recovery current - -1.6 A Notes: (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% |
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