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TPA3110D2PWP Datasheet(PDF) 6 Page - Texas Instruments |
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TPA3110D2PWP Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 35 page  6 TPA3110D2 SLOS528F – JULY 2009 – REVISED APRIL 2017 www.ti.com Product Folder Links: TPA3110D2 Submit Documentation Feedback Copyright © 2009–2017, Texas Instruments Incorporated (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±500 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage PVCC, AVCC 8 26 V VIH High-level input voltage SD, GAIN0, GAIN1, PBTL 2 V VIL Low-level input voltage SD, GAIN0, GAIN1, PBTL 0.8 V VOL Low-level output voltage FAULT, RPULL-UP= 100 k, VCC= 26 V 0.8 V IIH High-level input current SD, GAIN0, GAIN1, PBTL, VI = 2 V, VCC = 18 V 50 µA IIL Low-level input current SD, GAIN0, GAIN1, PBTL, VI = 0.8 V, VCC = 18 V 5 µA TA Operating free-air temperature –40 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) TPA3110D2 UNIT PWP (HTSSOP) 28 PINS RθJA Junction-to-ambient thermal resistance 30.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.5 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 7.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W 7.5 DC Characteristics: 24 V TA = 25°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT | VOS | Class-D output offset voltage (measured differentially) VI = 0 V, Gain = 36 dB 1.5 15 mV ICC Quiescent supply current SD = 2 V, no load, PVCC = 24 V 32 50 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 24 V 250 400 µA rDS(on) Drain-source on-state resistance VCC = 12 V, IO = 500 mA, TJ = 25°C High Side 240 m Ω Low side 240 G Gain GAIN1 = 0.8 V GAIN0 = 0.8 V 19 20 21 dB GAIN0 = 2 V 25 26 27 GAIN1 = 2 V GAIN0 = 0.8 V 31 32 33 dB GAIN0 = 2 V 35 36 37 ton Turn-on time SD = 2 V 14 ms tOFF Turn-off time SD = 0.8 V 2 μs GVDD Gate Drive Supply IGVDD = 100 μA 6.4 6.9 7.4 V tDCDET DC Detect time V(RINN) = 6 V, VRINP = 0 V 420 ms |
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