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L7987 Datasheet(PDF) 10 Page - STMicroelectronics |
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L7987 Datasheet(HTML) 10 Page - STMicroelectronics |
10 / 37 page Electrical characteristics L7987 10/37 DocID025589 Rev 3 VPGDLOW PGOOD low level IPGD = 1 mA, VFB = GND 30 mV IPGDLKG PGOOD leakage current VPGOOD = 61 V;VFB = 0.8 V 0.1 A Thermal shutdown TSHDWN Thermal shutdown temperature (3) 170 °C THYS Thermal shutdown hysteresis (3) 15 °C 1. Specifications referred to TJ from -40 to +125 °C. Specifications in the -40 to +125 °C temperature range are assured by design, characterization and statistical correlation. 2. Parameter tested in static condition during testing phase. Parameter value may change over dynamic application condition. 3. Not tested in production. Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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