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HUR20100CT Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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HUR20100CT Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 3 page HUR20100CT, HUR20120CT HUR20100CT HUR20120CT VRSM V 1000 1200 VRRM V 1000 1200 Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TC=115oC; rectangular, d=0.5 35 2 x 10 A TVJ TVJM Tstg -55...+175 175 -55...+150 oC IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS TVJ=25oC; non-repetitive; IAS=8A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive 40 6.9 0.8 A mJ IAR A Ptot TC=25oC Md mounting torque typical 60 0.4...0.6 2 W Nm Weight g Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB A=Anode, C=Cathode, TAB=Cathode A A C C(TAB) A C A Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes P1 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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