2

Symbol

Parameter

Units

Absolute Max.

Device Voltage,

RF output to ground

V

5.5

CW RF Input Power

dBm

+15

W

0.715

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infra-Red

measurement technique.

3. Power dissipation with unit turned on. Board

for DC bypass.

Symbol

Parameter and Test Condition

Frequency (MHz)

Units

Min.

Typ.

Max.

Drain Current

mA

75

92

107

Gain

Gain

776

849

dB

–

14.2

15.4

15.6

–

17.2

IRL

Input Return Loss, 50

Ω source

dB

–

30

–

ORL

Output Return Loss, 50

Ω load

dB

–

26

–

Noise Figure

776

849

dB

–

–

0.84

0.78

–

0.95

Input Third Order Intercept Point

dBm

18.7

21.3

–

IP1dB

Input Power at 1 dB Gain Compression

dBm

2.85

4

–

Bypass IL

Bypass Insertion Loss, 50

Ω load Vdd = 0 V

776

849

dB

–

–

0.7

0.82

–

1.1

Bypass IRL

Input Return Loss, 50

Ω source Vdd = 0 V

dB

–

35

–

Bypass ORL

Output Return Loss, 50

Ω load Vdd = 0 V

dB

–

35

–

ISOL

Bypass Isolation @LNA ON Vdd = 5 V

dB

–

54

–

Notes:

1. Measurements at 849 MHz obtained using demo board described in Figure 1.

2. For NF data, board losses of the input have not been de-embedded.

4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.