DEMO-AT32063 datasheet(3/8 Pages) BOARDCOM

Part #	DEMO-AT32063

Description	Low Current, High Performance NPN Silicon Bipolar Transistor

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Manufacturer	BOARDCOM [Broadcom Corporation.]

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AT-32063 Characterization Information, T

A = 25°C

Symbol

Parameters and Test Conditions

Units

Typ.

P

1dB

Powerat1dBGainCompression(opttuning);V

CE=2.7V,IC=20mA

f=0.9GHz

dBm

12

G

1dB

Gainat1dBGainCompression(opttuning);V

CE=2.7V,IC=20mA

f=0.9GHz

dB

16

IP

3

OutputThirdOrderInterceptPoint(opttuning);V

CE=2.7V,IC=20mA

f=0.9GHz

dBm

24

Typical Performance, T

A = 25°C

0

0.50

1.00

2.00

1.50

0.9

1.8

2.4

FREQUENCY (GHz)

Figure 2. Minimum Noise Figure vs. Frequency and

Current at VCE = 2.7 V.

2.7V/2 mA

2.7V/5 mA

2.7V/20 mA

0

5.0

10.0

20.0

15.0

0.9

1.8

2.4

FREQUENCY (GHz)

Figure 3. Associated Gain at Optimum Noise Match

vs. Frequency and Current at VCE = 2.7 V.

2.7V/2 mA

2.7V/5 mA

2.7V/20 mA

10

11

12

15

13

14

0.9

1.8

2.4

FREQUENCY (GHz)

Figure 4. Power at 1 dB Gain Compression vs. Frequency

at VCE= 2.7 V and IC = 20 mA.

0

5

10

15

25

20

0

0.5

1.0

1.5

2.0

2.5

FREQUENCY (GHz)

Figure 6. Third Order Intercept vs. Frequency and Bias at

VCE = 2.7 V, with Optimal Tuning.

2 mA

5 mA

10 mA

20 mA

0

3

6

18

15

9

12

0.9

1.8

2.4

FREQUENCY (GHz)

Figure 5. 1 dB Compressed Gain vs. Frequency at VCE =

2.7 V and IC= 20 mA.

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