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HUR10100 Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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HUR10100 Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 3 page HUR10100, HUR10120 Dim. A B C D E F G H J K L M N Q Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 HUR10100 HUR10120 VRSM V 1000 1200 VRRM V 1000 1200 A=Anode, C=Cathode, TAB=Cathode C A Symbol Test Conditions Maximum Ratings Unit IFRMS IFAVM TC=115oC; rectangular, d=0.5 35 10 A TVJ TVJM Tstg -55...+175 175 -55...+150 oC IFSM TVJ=45oC; tp=10ms (50Hz), sine EAS TVJ=25oC; non-repetitive; IAS=8A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive 40 6.9 0.8 A mJ IAR A Ptot TC=25oC Md mounting torque typical 60 0.4...0.6 2 W Nm Weight g Dimensions TO-220AC Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes C(TAB) C A P1 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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