3

Symbol

Parameter

Units

Absolute Max.

Device Voltage, RF output to ground

V

5.5

Gate Voltage

V

1

CW RF Input Power

(Vdd = 5.0, Id=50mA)

dBm

15

Device Current,

RFout to ground per channel

mA

100

W1

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

2. Operation of this device in excess of any of

these limits may cause permanent damage.

3. Thermal resistance measured using Infra-Red

Measurement Technique with both channels

4. Power dissipation with both channels turned

board in Figure 5 with component list in Table1 for 850 MHz matching.

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

Vgg

V

0.38

0.48

0.63

Gain

Gain

850

dB

17.7

900

dB

15.8

17.4

18.8

Output Third Order Intercept Point

850

dBm

11.8

900

dBm

10.5

12.4

Noise Figure

850

dB

0.40

900

dB

0.41

0.70

OP1dB

Output Power at 1dB Gain Compression

850

dBm

18.3

900

dBm

19.3

IRL

Input Return Loss, 50

: source

850

dB

8.9

900

dB

7.0

ORL

Output Return Loss, 50

: load

850

dB

3.3

900

dB

4.7

REV ISOL

Reverse Isolation

850

dB

29.9

900

dB

29.5

Isolation between RFin1 and RFin2

850

dB

45

900

dB

45

Notes:

7. Measurements at 850 MHz and 900 MHz are obtained using demo board described in Figure 5.

8. IIP3 test condition:

9. For NF data, board losses of the input have not been de-embedded.

10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.