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AS4C256M8D3-12BAN Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation |
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AS4C256M8D3-12BAN Datasheet(HTML) 9 Page - Alliance Semiconductor Corporation |
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9 / 82 page  Functional Description The DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. The DDR3 SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n Prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A14 select the row). The address bit registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR3 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device operation. Figure 4. Reset and Initialization Sequence at Power-on Ramping CK# VDDQ Tb Tc Td Te Tf Tg Th Ti Tj Ta RESET# CK tCKSRX Tk T=200µs T=500µs tDLLK tXPR tMRD tMRD tMRD tMOD tZQinit MRS Note 1 MRS MRS MRS ZQCL Note 1 VALID MR3 MR2 MR1 MR0 VALID VALID VDD CKE BA ODT RTT Tmin=10ns tIS tIS tIS tIS Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW Don't Care TIME BREAK NOTE 1. From time point “Td”until “Tk”NOP or DES commands must be applied between MRS and ZQCL commands. COMMAND 2Gb Auto-AS4C256M8D3 Confidential -9/82- Rev.1.0 June 2015 |
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