CP527-2N6299

PNP - Darlington Transistor Die

8.0 Amp, 80 Volt

MECHANICAL SPECIFICATIONS:

Die Size

110 x 110 MILS

Die Thickness

10.6 MILS

Base Bonding Pad Size

21 x 24 MILS

Emitter Bonding Pad Size

24 x 42 MILS

Top Side Metalization

Al – 20,000Å

Back Side Metalization

Ni/Ag – 2,000Å/10,000Å

Scribe Alley Width

4.3 mils

Wafer Diameter

4 INCHES

Gross Die Per Wafer

875

R1 (28-June 2016)

The CP527-2N6299 is a silicon PNP Darlington power transistor designed for high gain amplifier

applications.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

8.0

A

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEV

VCE=80V, VBE=1.5V

0.5

mA

ICEO

VCE=40V

0.5

mA

IEBO

VEB=5.0V

2.0

mA

BVCEO

IC=100mA

80

V

VCE(SAT)

IC=4.0A, IB=16mA

2.0

V

VCE(SAT)

IC=8.0A, IB=80mA

3.0

V

VBE(SAT)

IC=8.0A, IB=80mA

4.0

V

VBE(ON)

VCE=3.0V, IC=4.0A

2.8

V

hFE

VCE=3.0V, IC=4.0A

750

18K

hFE

VCE=3.0V, IC=8.0A

100

hfe

VCE=3.0V, IC=3.0A, f=1.0kHz

300

fT

VCE=3.0V, IC=3.0A, f=1.0MHz

4.0

MHz

Cob

VCB=10V, IE=0, f=100kHz

300

pF

www.centr a lsemi.

com