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CPD16-CMR1U-06M Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD16-CMR1U-06M Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 3 page CPD16-CMR1U-06M Ultra Fast Rectifier Die 1.0 Amp, 600 Volt Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Size 34 x 34 MILS Top Side Metalization Ni/Au – 4,500Å/1,000Å Back Side Metalization Ni/Au – 5,000Å/1,000Å Scribe Alley Width 3.0 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 4,250 The CPD16-CMR1U-06M is a silicon 1.0 Amp, 600 Volt ultra fast recovery rectifier ideal for all types of commercial, industrial, entertainment, and computer applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 600 V DC Blocking Voltage VR 600 V RMS Reverse Voltage VR(RMS) 420 V Average Forward Current (TA=75°C) IO 1.0 A Peak Forward Surge Current, tp=8.3ms IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=600V 5.0 µA VF IF=1.0A 1.4 V CJ VR=0, f=1.0MHz 40 pF trr IF=0.5A, IR=1.0A, Irr=0.25A 75 ns R1 (30-August 2016) www.centra lsemi. com |
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