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AS4C16M16MD1-6BCN Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation |
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AS4C16M16MD1-6BCN Datasheet(HTML) 9 Page - Alliance Semiconductor Corporation |
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9 / 55 page  AS4C16M16MD1 256Mb MOBILE DDR SDRAM 5. FUNCTION DESCRIPTION The LPDDR SDRAM is a high speed CMOS, dynamic random-access memory internally configured as a quad-bank DRAM. These devices contain the following number of bits: 256 Mb has 268,435,456 bits The LPDDR SDRAM uses a double data rate architecture to achieve high speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the LPDDR SDRAM effectively consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clockcycle data transfers at the I/O pins. Read and write accesses to the LPDDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. Prior to normal operation, the LPDDR SDRAM must be initialized. The following section provides detailed information covering device initialization, register definition, command description and device operation. 5.1 Initialization LPDDR SDRAMs must be powered up and initialized in a predefined manner. Operations procedures other than those specified may result in undefined operation. If there is any interruption to the device power, the initialization routine should be followed. The steps to be followed for device initialization are listed below. The Initialization Flow diagram is shown in Figure 4, and the Initialization Flow sequence in Figure 5. The Mode Register and Extended Mode Register do not have default values. If they are not programmed during the initialization sequence, it may lead to unspecified operation. The clock stop feature is not available until the device has been properly initialized from Steps 1 through 11. 1. Provide power, the device core power (VDD) and the device I/O power (VDDQ) must be brought up simultaneously to prevent device latch-up. Although not required, it is recommended that VDD and VDDQ are from the same power source. Also assert and hold Clock Enable (CKE) to a LV-CMOS logic high level 2. Once the system has established consistent device power and CKE is driven high, it is safe to apply stable clock 3. There must be at least 200 μs of valid clocks before any command may be given to the DRAM. During this time NOP or DESELECT commands must be issued on the command bus. 4. Issue a PRECHARGE ALL command. 5. Provide NOPs or DESELECT commands for at least tRP time. 6. Issue an AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time. Issue the second AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time. Note as part of the initialization sequence there must be two auto refresh commands issued. The typical flow is to issue them at Step 6, but they may also be issued between steps 10 and 11. 7. Using the MRS command, load the base mode register. Set the desired operating modes. 8. Provide NOPs or DESELECT commands for at least tMRD time. 9. Using the MRS command, program the extended mode register for the desired operating modes. Note the order of the base and extended mode register programming is not important. 10. Provide NOP or DESELCT commands for at least tMRD time. 11. The DRAM has been properly initialized and is ready for any valid command. Mar, 28, 2013 - 9 - |
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