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K9K1208U0A-YCB0 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K9K1208U0A-YCB0
Description  64M x 8 Bit NAND Flash Memory
Download  27 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9K1208U0A-YCB0 Datasheet(HTML) 3 Page - Samsung semiconductor

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K9K1208U0A-YCB0, K9K1208U0A-YIB0
FLASH MEMORY
3
512B Byte
16 Byte
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
A24
4th Cycle
A25
*L
*L
*L
*L
*L
*L
*L
VCC
X-Buffers
Command
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
VSS
A9 - A25
A0 - A7
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 7
VCC
VSS
A8
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
128K Pages
(=4,096 Blocks)
512 Byte
8 bit
16 Byte
1 Block = 32 Pages
= (16K + 512) Byte
I/O 0 ~ I/O 7
1 Page = 528 Byte
1 Block = 528 Bytes x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 4,096 Blocks
= 528 Mbits
Column Address
Row Address
(Page Address)
Page Register
ALE
512M + 16M Bit
NAND Flash
ARRAY
(512 + 16)Byte x 131072
Y-Gating
Page Register & S/A


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