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SGA-4186 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 4 page The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 1 Product Description EDS-100637 Rev. B Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 SGA-4186 DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features High Gain : 9.2 dB at 1950 MHz Cascadable 50 Ohm Patented SiGe Technology Operates From Single Supply Low Thermal Resistance Package Stanford Microdevices SGA-4186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non- linearities results in higher suppression of intermodulation products. At 850 Mhz and 45mA , the SGA-4186 typically provides +28.3 dBm output IP3, 10 dB of gain, and +14.6 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. l o b m y S r e t e m a r a P s ti n U y c n e u q e r F . n i M . p y T . x a M Gn i a G l a n g i S ll a m SB d z H M 0 5 8 z H M 0 5 9 1 z H M 0 0 4 2 0 . 90 . 0 1 2 . 9 9 . 8 0 . 1 1 P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u Om B d z H M 0 5 8 z H M 0 5 9 1 6 . 4 1 4 . 2 1 P I O 3 t n i o P t p e c r e t n I r e d r O d ri h T t u p t u O ) m B d 5 - = e n o t r e p t u o r e w o P ( m B d z H M 0 5 8 z H M 0 5 9 1 3 . 8 2 5 . 5 2 h t d i w d n a B ) B d 0 1 - < ( s s o L n r u t e R y b d e n i m r e t e Dz H M0 0 0 5 L R Is s o L n r u t e R t u p n IB dz H M 0 5 9 13 . 0 2 L R Os s o L n r u t e R t u p t u OB dz H M 0 5 9 14 . 4 2 F Ne r u g i F e s i o NB dz H M 0 5 9 12 . 5 V D e g a tl o V e c i v e DV 8 . 22 . 36 . 3 R h T e c n a t s i s e R l a m r e h TW / C °7 9 Test Conditions: V S = 8 V I D = 45 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm R BIAS = 110 Ohms T L = 25ºC Z S = ZL = 50 Ohms Applications Cellular, PCS, CDPD Wireless Data, SONET Satellite 0 4 8 12 16 01 234 5 Frequency (GHz) -40 -30 -20 -10 0 GAIN IRL ORL Gain & Return Loss vs. Frequency V D= 3.2 V, ID= 45 mA (Typ.) |
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