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SI4403DY Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SI4403DY
Description  P-Channel 1.8-V (G-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4403DY Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
– Game Stations
– Notebooks
– Desktops
Si4403DY
Vishay Siliconix
New Product
Document Number: 71683
S-04393—Rev. A, 13-Aug-01
www.vishay.com
1
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.017 @ VGS = –4.5 V
–9
–20
0.023 @ VGS = –2.5 V
–7
0.032 @ VGS = –1.8 V
–6
SD
S
D
SD
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"8
V
_ a
TA = 25_C
–9
–6.5
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
–7
–5.0
Pulsed Drain Current
IDM
–30
A
continuous Source Current (Diode Conduction)a
IS
–2.1
–1.3
TA = 25_C
2.5
1.35
Maximum Power Dissipationa
TA = 70_C
PD
1.6
0.87
W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v 10 sec
38
50
Maximum Junction-to-Ambienta
Steady State
RthJA
71
92
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
19
25
C/W
Notes
a
Surface Mounted on 1” x 1” FR4 Board.


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