SI4403DY datasheet(2/4 Pages) VISHAY

Part #	SI4403DY

Description	P-Channel 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4403DY

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71683

S-04393—Rev. A, 13-Aug-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = –16 V, VGS = 0 V

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 70_C

–10

mA

On-State Drain Currenta

ID(on)

VDS –5 V, VGS = –4.5 V

20

A

VGS = –4.5 V, ID = –7.4 A

0.014

0.017

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –6.3 A

0.018

0.023

W

DS(on)

VGS = –1.8 V, ID = –5.5 A

0.024

0.032

W

Forward Transconductancea

gfs

VDS = –15 V, ID = –7.4 A

28

S

Diode Forward Voltagea

VSD

IS = –1.3 A, VGS = 0 V

–0.64

–1.1

V

Dynamicb

Total Gate Charge

Qg

30.5

50

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –5 V, ID = –7.4 A

5.3

nC

Gate-Drain Charge

Qgd

3.8

Turn-On Delay Time

td(on)

30

50

Rise Time

tr

VDD = –10 V, RL = 15 W

30

50

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 15 W

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

110

200

ns

Fall Time

tf

65

110

Source-Drain Reverse Recovery Time

trr

IF = –1.3 A, di/dt = 100 A/ms

45

80

Notes

a

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

0

6

12

18

24

30

02468

VGS = 5 thru 2 V

TC = 125_C

–55

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1.5 V

0 – 1 V

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