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SK35GAL12T4 Datasheet(PDF) 2 Page - Semikron International

Part # SK35GAL12T4
Description  Compact design
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SK35GAL12T4 Datasheet(HTML) 2 Page - Semikron International

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SK 35 GAL 12T4
2
Rev. 0 – 03.06.2013
© by SEMIKRON
SEMITOP® 2
GAL
IGBT module
SK 35 GAL 12T4
Features
•Compact design
• One screw mounting
• Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
• High short circuit capability
• Trench4 IGBT technology
• CAL4F diode technology
•VCE,sat with positive coefficient
• UL recognized, file no. E 63 532
Typical Applications*
•Inverter
•Motor drive
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Chopper IGBT
td(on)
VCC = 600 V
IC =35A
RG on =22 
RG off =22 
di/dton = 2900 A/µs
di/dtoff =2900 A/µs
VGE = +15/-7 V
Tj =150 °C
28
ns
tr
Tj =150 °C
25
ns
Eon
Tj =150 °C
3.27
mJ
td(off)
Tj =150 °C
303
ns
tf
Tj =150 °C
70
ns
Eoff
Tj =150 °C
3.3
mJ
Rth(j-s)
per IGBT
1.21
K/W
Chopper Diode
VF = VEC
IF =35A
VGE =15 V
chiplevel
Tj =25 °C
2.3
2.62
V
Tj =150 °C
2.29
2.62
V
VF0
chiplevel
Tj =25 °C
1.3
1.5
V
Tj =150 °C
0.9
1.1
V
rF
chiplevel
Tj =25 °C
28.6
32.0
m
Tj =150 °C
39.7
43.4
m
IRRM
IF =35A
di/dtoff =2900 A/µs
VGE =-7 V
VR = 600 V
Tj =150 °C
30
A
Qrr
Tj =150 °C
2µC
Err
Tj =150 °C
1.46
mJ
Rth(j-s)
per Diode
1.55
K/W
Freewheeling Diode
VF = VEC
IF =35A
VGE =15 V
chiplevel
Tj =25 °C
2.3
2.60
V
Tj =150 °C
2.29
2.62
V
VF0
chiplevel
Tj =25 °C
1.3
1.5
V
Tj =150 °C
0.9
1.1
V
rF
chiplevel
Tj =25 °C
28.6
32.0
m
Tj =150 °C
39.7
43.4
m
IRRM
IF =35A
di/dtoff =2900 A/µs
VGE =-7 V
VR = 600 V
Tj =150 °C
30
A
Qrr
Tj =150 °C
2µC
Err
Tj =150 °C
1.46
mJ
Rth(j-s)
per Diode
1.55
K/W
Module
LCE
nH
RCC'+EE'
Ts =25°C
m
m
Ms
Mounting torque to heatsink
1.8
2
Nm
Mt
Nm
Nm
w19
g
Temperature Sensor
R100
B100/125
K


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