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2SC5554 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC5554 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 8 page  2SC5554 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 9V Emitter to base voltage V EBO 1.5 V Collector current I C 20 mA Collector power dissipation Pc 80 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector cutoff current I CBO —— 10 µAV CB = 15V , IE = 0 Collector cutoff current I CEO —— 1 mA V CE = 9V , RBE = ∞ Emitter cutoff current I EBO —— 10 µAV EB = 1.5V , IC = 0 DC current transfer ratio h FE 50 120 250 V V CE = 1V , IC = 5mA Collector output capacitance Cob — 0.6 0.9 pF V CB = 1V , IE = 0 f = 1MHz Gain bandwidth product f T 3.5 7 — GHz V CE = 1V , IC = 5mA Power gain PG 9 12 — dB V CE = 1V, IC = 5mA f = 900MHz Noise figure NF — 1.4 3 dB V CE = 1V, IC = 5mA f = 900MHz |
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