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FDZ191P Datasheet(HTML) 3 Page - Fairchild Semiconductor

Part No. FDZ191P
Description  P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
Download  7 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDZ191P Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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FDZ191P Rev.F (W)
www.fairchildsemi.com
3
Typical Characteristics T
J = 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
16
VGS = -3.5V
VGS = -4.5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = -2.5V
VGS = -1.5V
VGS = -2.0V
-V
DS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure2.
02
46
8
10
12
14
16
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS = -4.5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
-ID, DRAIN CURRENT(A)
VGS = -2.5V
VGS = -2.0V
VGS = -1.5V
VGS = -3.5V
NormalizedOn-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = -1A
VGS = -4.5V
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
12
345
40
80
120
160
200
240
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
TJ = 125oC
TJ = 25oC
ID = - 0.5A
-VGS, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.51.01.52.02.5
0
3
6
9
12
15
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
TJ = -55oC
TJ = 25oC
TJ = 125oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.20.40.6
0.81.01.21.4
1E-4
1E-3
0.01
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ = 125oC
VGS = 0V
VSD, BODY DIODE FORWARD VOLTAGE (V)
60
Source to Drain Diode
Forward Voltage vs Source Current


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