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FDZ191P Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDZ191P
Description  P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDZ191P Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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tm
October 2006
©2006 Fairchild Semiconductor Corporation
FDZ191P Rev.F (W)
www.fairchildsemi.com
1
FDZ191P
P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
-20V, -1A, 85m
Features
Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A
Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A
Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A
Occupies only 1.5 mm2 of PCB area Less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and rDS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low rDS(on). .
Application
Battery management
Load switch
Battery protection
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
-20
V
VGS
Gate to Source Voltage
±8
V
ID
Drain Current -Continuous
TA = 25°C
(Note 1a)
-3
A
-Pulsed
-15
PD
Power Dissipation
TA = 25°C
(Note 1a)
1.5
W
Power Dissipation
TA = 25°C
(Note 1b)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RθJA
Thermal Resistance, Junction to Case
(Note 1a)
83
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
140
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
1
FDZ191P
WL-CSP
7’’
8mm
5000 units
PIN 1
D
S
S
D
S
G
S
D
G
BOTTOM
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