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BAS16VY Datasheet(PDF) 6 Page - NXP Semiconductors |
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BAS16VY Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 9397 750 13856 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 10 September 2004 6 of 12 Philips Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 8. Test information Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ≤ 0.05. Oscilloscope: Rise time tr = 0.35 ns. (1) IR = 1 mA. Fig 5. Reverse recovery voltage test circuit and waveforms. trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ≤ 0.005. Fig 6. Forward recovery voltage test circuit and waveforms. tr t tp 10 % 90 % I input signal RS = 50 Ω I Ri = 50 Ω OSCILLOSCOPE 1 k Ω 450 Ω D.U.T. mga882 Vfr t output signal V |
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