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2SJ610 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # 2SJ610
Description  Switching Regulator
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ610 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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2SJ610
2002-09-11
4
0
0
40
120
160
200
10
30
40
20
80
Case temperature Tc
(°C)
RDS (ON) – Tc
Drain-source voltage VDS (V)
IDR – VDS
Case temperature Tc
(°C)
Vth – Tc
Case temperature Tc
(°C)
PD – Tc
Total gate charge Qg (nC)
Dynamic input/output characteristics
Drain-source voltage VDS (V)
Capacitance – VDS
ID = -1 A
-2 A
0
-80
-40
0
40
80
120
160
1
2
3
4
5
Common source
V
GS = -10 V
Pulse test
Ciss
Coss
Crss
1000
Common source
V
GS = 0 V
f
= 1 MHz
Tc
= 25°C
-0.1
100
10
1
-1
-10
-100
-0.3
-3
-30
0
-80
-40
0
40
80
120
160
-2
-3
-4
-5
-1
Common source
V
DS = -10 V
I
D = -1 mA
Pulse test
-50
0
035
-300
VDD = -200 V
Common source
I
D = -2 A
Tc
= 25°C
Pulse test
-200
-100
25
15
5
-100
VGS
VDS
-30
-25
-20
-15
-10
-5
-0
-1
0.1
0
0 2
0.4
1 2
-10
-100
Common source
Tc
= 25°C
Pulse test
0.6
0.8
1.0
1.4
VGS = -10 V
-5 V
-3 V
0, 1


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