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2SJ610 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SJ610 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SJ610 2002-09-11 4 0 0 40 120 160 200 10 30 40 20 80 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics Drain-source voltage VDS (V) Capacitance – VDS ID = -1 A -2 A 0 -80 -40 0 40 80 120 160 1 2 3 4 5 Common source V GS = -10 V Pulse test Ciss Coss Crss 1000 Common source V GS = 0 V f = 1 MHz Tc = 25°C -0.1 100 10 1 -1 -10 -100 -0.3 -3 -30 0 -80 -40 0 40 80 120 160 -2 -3 -4 -5 -1 Common source V DS = -10 V I D = -1 mA Pulse test -50 0 035 -300 VDD = -200 V Common source I D = -2 A Tc = 25°C Pulse test -200 -100 25 15 5 -100 VGS VDS -30 -25 -20 -15 -10 -5 -0 -1 0.1 0 0 2 0.4 1 2 -10 -100 Common source Tc = 25°C Pulse test 0.6 0.8 1.0 1.4 VGS = -10 V -5 V -3 V 0, 1 |
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