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BGF844 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGF844 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page 2003 Jun 06 2 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 2.5 W – Gain = 30 dB – Efficiency = 16% – ACPR < −65 dBc at 400 kHz – rms EVM < 0.4% – peak EVM < 1.2% • Low distortion to a GSM EDGE signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output impedance • Flat gain over frequency band. APPLICATIONS • Base station RF power amplifiers in the 869 to 894 MHz frequency range • GSM, GSM EDGE, multi carrier applications • Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band. PINNING - SOT365C PIN DESCRIPTION 1 RF input 2VS 3 RF output Flange ground 23 1 Top view MBL257 Fig.1 Simplified outline. QUICK REFERENCE DATA Typical RF performance at Tmb =25 °C. Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. MODE OF OPERATION f (MHz) VS (V) PL (W) Gp (dB) η (%) ACPR (dBc) rms EVM (%) CW 869 to 894 26 23 29 50 −− GSM EDGE 869 to 894 26 2.5 30 16 −65(1) 0.4 |
Similar Part No. - BGF844 |
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Similar Description - BGF844 |
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