2003 Jun 06

2

Philips Semiconductors

Product specification

GSM800 EDGE power module

BGF844

FEATURES

• Typical GSM EDGE performance at a supply voltage of

26 V:

– Output power = 2.5 W

– Gain = 30 dB

– Efficiency = 16%

– ACPR <

−65 dBc at 400 kHz

– rms EVM < 0.4%

– peak EVM < 1.2%

• Low distortion to a GSM EDGE signal

• Excellent 2-tone performance

• Low die temperature due to copper flange

• Integrated temperature compensated bias

• 50 Ω input/output impedance

• Flat gain over frequency band.

APPLICATIONS

• Base station RF power amplifiers in the 869 to 894 MHz

frequency range

• GSM, GSM EDGE, multi carrier applications

• Macrocell (driver stage) and Microcell (final stage).

DESCRIPTION

23 W LDMOS power amplifier module for base station

amplifier applications in the 869 to 894 MHz band.

PINNING - SOT365C

PIN

DESCRIPTION

1

RF input

3

RF output

Flange

ground

23

1

Top view

MBL257

Fig.1 Simplified outline.

QUICK REFERENCE DATA

Note

1. ACPR 400 kHz at 30 kHz resolution bandwidth.

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

η

(%)

ACPR

(dBc)

rms EVM

(%)

CW

869 to 894

26

23

29

50

−−

GSM EDGE

869 to 894

26

2.5

30

16

0.4